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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1496 DESCRIPTION *With TO-3PN package *High voltage ,high reliability *Wide area of safe operation APPLICATIONS *High voltage power switching TV horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IC(surge) PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 6 5 16 50 150 -45~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1496 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 6 V V(BR)CEO VCEsat Collector-emitter breakdown voltage IC=10mA; RBE= IC=4.5A; IB=1.2A 600 V Collector-emitter saturation voltage 5.0 V VBEsat Base-emitter saturation voltage IC=4.5A; IB=1.2A 1.5 V ICEX Collector cut-off current VCE=1500V; VBE=1.5V 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=0.3A ; VCE=5V 10 30 s tf Fall time IC=3A;IB1=0.7A, IB2=-2.7A; LB=0 2.3 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1496 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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